Magnetic random access memory having perpendicular enhancement layer

A spin transfer torque magnetic random access memory (STT-MRAM) device comprising a plurality of memory elements, each of said memory elements including a magnetic tunnel junction (MTJ) structure in between a non-magnetic seed layer and a non-magnetic cap layer, said MTJ structure comprising:

• a magnetic free layer structure and a magnetic reference layer structure with an insulating tunnel junction layer interposed therebetween;
• and
• a magnetic fixed layer separated from said magnetic reference layer structure by an anti-ferromagnetic coupling layer,
• wherein said magnetic reference layer structure includes a first magnetic reference layer formed adjacent to said insulating tunnel junction layer and a second magnetic reference layer separated from said first magnetic reference layer by an intermediate magnetic reference layer, said first, second, and intermediate magnetic reference layers have a first invariable magnetization direction substantially perpendicular to layer plane thereof, said magnetic fixed layer has a second invariable magnetization direction that is substantially perpendicular to layer plane thereof and is opposite to said first invariable magnetization direction.

A spin transfer torque magnetic random access memory (STT-MRAM) device comprising a plurality of memory elements, each of said memory elements including a magnetic tunnel junction (MTJ) structure in between a non-magnetic seed layer and a non-magnetic cap layer, said MTJ structure comprising:

• a magnetic free layer structure and a magnetic reference layer with an insulating tunnel junction layer interposed therebetween;
• and
• a magnetic compensation layer separated from said magnetic free layer by a non-magnetic tuning layer,
• wherein said magnetic reference layer has a first invariable magnetization direction substantially perpendicular to layer plane thereof, said magnetic compensation layer has a second invariable magnetization direction that is substantially perpendicular to layer plane thereof and is substantially opposite to said first invariable magnetization direction.