Semiconductor device with a silicon dioxide gate insulation layer implanted with a rare earth element and methods of making such a device

A method of forming a transistor, comprising:

• performing a thermal oxidation process to form a silicon dioxide gate insulation layer on a semiconducting substrate;
• performing an ion implantation process to implant a rare earth element into said silicon dioxide gate insulation layer such that said silicon dioxide gate insulation layer comprising said implanted rare earth element has a k value of 5 or greater;
• and
• forming a silicon-containing gate electrode on said gate insulation layer comprising said implanted rare earth element.

A method of forming a transistor, comprising:

• performing a thermal oxidation process to form a silicon dioxide gate insulation layer on a semiconducting substrate;
• performing an ion implantation process to implant a rare earth element into said gate insulation layer, wherein said ion implantation process is performed using a dose of said rare earth element of about 1e13-1e14 atoms/cm2 and an energy level less than 1 keV;
• and
• forming a silicon-containing gate electrode on said gate insulation layer comprising said implanted rare earth element.