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US 2014/0151809 A1Published application
Apparatus for esd protection
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsWun-Jie Lin, Bo-Ting Chen, Jen-Chou Tseng, Ming-Hsiang Song
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Abstract
A structure comprises an N+ region formed over a substrate, a P+ region formed over the substrate, wherein the P+ region and the N+ region form a diode and a first epitaxial growth block region formed between the N+ region and the P+ region.
Claims20
A structure comprising:
- an N+ region formed over a substrate;
- a P+ region formed over the substrate, wherein the P+ region and the N+ region form a diode;
- and
- a first epitaxial growth block region formed between the N+ region and the P+ region, wherein the first epitaxial growth block region comprises silicon nitride.
1 more element
(canceled)
A system comprising:
- an integrated circuit comprising:
- a first terminal coupled to a first voltage rail;
- a second terminal coupled to an input/output pad;
- and
- a third terminal coupled to a second voltage rail;
- a first electrostatic discharge (ESD) protection diode coupled between the first voltage rail and the input/output pad, wherein the first ESD protection diode comprises:
- a first N+ region formed in an n-well of a substrate;
- a first P+ region formed in the n-well of the substrate;
- and
- a first epitaxial growth block region formed between the first N+ region and the first P+ region;
- and
- a second ESD protection diode coupled between the second voltage rail and the input/output pad, wherein the second ESD protection diode comprises:
- a second N+ region formed in a p-well of the substrate;
- a second P+ region formed in the p-well of the substrate;
- and
- a second epitaxial growth block region formed between the second N+ region and the second P+ region.
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A method comprising:
- forming an active region including a plurality of fins;
- depositing an epitaxial growth block layer over the active region;
- patterning the epitaxial growth block layer to define a first growth area for an N+region and a second growth area for a P+ region;
- removing portions of the active region in the first growth area and the second growth area;
- and
- growing the N+ region and the P+ region through an epitaxial growth process, wherein the N+ region and the P+ region form an electrostatic discharge (ESD) protection diode.
3 more elements
Dependencies are inferred from the claim text.