Semiconductor Device Including a Fin and a Drain Extension Region and Manufacturing Method
AssigneeInfineon Technologies Austria AG
InventorsAndreas Meiser, Christian Kampen
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Abstract
One embodiment of a semiconductor device includes a fin on a first side of a semiconductor body. The semiconductor device further includes a body region of a second conductivity type in at least a part of the fin. The semiconductor device further includes a drain extension region of a first conductivity type, a source and a drain region of the first conductivity type, and a gate structure adjoining opposing walls of the fin. The body region and the drain extension region are arranged one after another between the source region and the drain region.
Claims25
A semiconductor device, comprising:
- a fin at a first side of a semiconductor body;
- a body region of a second conductivity type in at least a part of the fin;
- a drain extension region of a first conductivity type;
- a source region and a drain region of the first conductivity type;
- and
- a gate structure adjoining opposing walls of the fin,
- wherein the body region and the drain extension region are arranged one after another between the source region and the drain region.
A method of manufacturing a semiconductor device, comprising:
- forming a fin at a first side of a semiconductor body;
- forming a body region of a second conductivity type in at least a part of the fin;
- forming a drain extension region of a first conductivity type;
- forming a source region and a drain region of the first conductivity type;
- and
- forming a gate structure adjoining opposing walls of the fin,
- wherein the body region and the drain extension region are arranged one after another between the source region and the drain region.
Dependencies are inferred from the claim text.