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AssigneeInternational Business Machines Corporation
InventorsKangguo Cheng, Bruce B. Doris, Balasubramanian S. Haran, Ali Khakifirooz, Pranita Kerber
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Embodiments include semiconductor-on-insulator (SOI) substrates having SOI layers strained by oxidation of the base substrate layer and methods of forming the same. The method may include forming a strained channel region in a semiconductor-on-insulator (SOI) substrate including a buried insulator (BOX) layer above a base substrate layer and a SOI layer above the BOX layer by first etching the SOI layer and the BOX layer to form a first isolation recess region and a second isolation recess region. A portion of the SOI layer between the first isolation recess region and the second isolation recess region defines a channel region in the SOI layer. A portion of the base substrate layer below the first isolation recess region and below the second isolation recess region may then be oxidized to form a first oxide region and a second oxide region, respectively, that apply compressive strain to the channel region.
A method of forming a strained channel region in a semiconductor-on-insulator (SOI) substrate including a buried insulator (BOX) layer above a base substrate layer and a SOI layer above the BOX layer, the method comprising:
A strained semiconductor-on-insulator (SOI) substrate comprising:
A semiconductor device comprising:
Dependencies are inferred from the claim text.