Semiconductor Device and Method of Manufacturing a Semiconductor Device

A method of manufacturing a semiconductor device in a semiconductor substrate, the semiconductor substrate comprising a first main surface and a transistor, wherein forming the transistor comprises:

• forming a source region, a drain region, a channel region, a drift zone and a gate electrode adjacent to the channel region, wherein the channel region and the drift zone are formed so as to be disposed along a first direction between the source region and the drain region, the first direction being parallel to the first main surface, wherein forming the channel region comprises forming a first ridge in the semiconductor substrate, the first ridge extending along the first direction, the first ridge having a first width d1 with:
• d1≦2×ld, wherein ld denotes a length of a depletion zone formed at an interface between the first ridge and a gate dielectric, the gate dielectric disposed between the first ridge and the gate electrode.