Approach to integrate schottky in mosfet

A method for forming an integrated structure combining one or more field effect transistors and a Schottky diode, the method comprising:

• a) forming a plurality of trenches formed into a semiconductor substrate and extending into the substrate thereby forming a plurality of mesas there between, each trench being substantially filled with a conductive material that is separated from the trench walls by a thin layer of dielectric material to form a gate region of one or more field effect transistors;
• b) forming at least two contact trenches in each mesa, each contact trench extending along a portion of depth of a doped body region of a first conductivity type opposite that of the substrate formed inside each mesa, whereby at least two contact trenches are separated by an exposed portion of the substrate;
• c) forming a pair of doped source regions of a second conductivity type formed adjacent to and on opposite sides of each contact trench inside the doped body region;
• and
• d) forming a Schottky diode comprising Schottky barrier metal formed over the exposed portion of the substrate, the Schottky barrier metal forming a Schottky junction at an interface between the Schottky barrier metal and an exposed surface of the exposed portion of the substrate separating the two contact trenches.