Trench power field effect transistor device and method

A semiconductor device comprising:

• a region of semiconductor material of a first conductivity type having a major surface;
• a trench extending into the region of semiconductor material from the major surface;
• an insulator layer formed adjacent sidewall surfaces of the trench;
• a shield electrode in a bottom portion of the trench and overlying a portion of the insulator layer;
• a gate electrode in the trench and overlying the shield electrode;
• a body region of a second conductivity type formed within the region of semiconductor material and adjacent to the gate electrode;
• a source region of the first conductivity type within the body region;
• a body contact structure extending from the major surface and comprising a conductive region;
• and
• a body contact region of the second conductivity type within the body region and connected to the body contact structure, wherein the body contact region is formed as a result of a first ion implantation, a second ion implantation and a subsequent annealing, wherein the first ion implantation comprises one of a germanium, a silicon, an argon, and a xenon ion implantation, and wherein the second ion implantation comprises one of a boron and a boron difluoride ion implantation.