Electronic device including a trench and a conductive structure therein

An electronic device comprising a transistor structure, comprising:

• a patterned semiconductor layer overlying a substrate and having a primary surface, wherein the patterned semiconductor layer defines a first trench and a second trench that extend from the primary surface towards the substrate and are within an active region;
• a first conductive structure within the first trench;
• a second conductive structure within the second trench;
• a first insulating layer within the first trench between the first conductive structure and the semiconductor layer;
• a second insulating layer within the second trench between the second conductive structure and the semiconductor layer;
• a gate electrode within the first trench;
• a third insulating layer within the first trench between the gate electrode and the first conductive structure;
• and
• a body contact region within the patterned semiconductor layer and between the first and second trenches,
• wherein the body contact region is spaced apart from the primary surface, and wherein no gate electrode is disposed above the second conductive structure.

An electronic device comprising a transistor structure, comprising:

• a patterned semiconductor layer overlying a substrate and having a primary surface, wherein the patterned semiconductor layer defines a first trench, a second trench, and a third trench that extend from the primary surface towards the substrate, wherein the first, second, and third trenches are within an active region, and the third trench is disposed between the first and second trenches;
• a first conductive structure within the first trench;
• a first gate electrode within the first trench and electrically insulated from the first conductive structure;
• a second conductive structure within the second trench;
• a second gate electrode within the second trench and electrically insulated from the second conductive structure;
• and
• a third conductive structure within the third trench, wherein no gate electrode is disposed above the third conductive structure.