Semiconductor device

A semiconductor device including a cell region and a peripheral region surrounding the cell region, the semiconductor device comprising:

• a semiconductor substrate including a first-conductivity-type layer, and first-conductivity-type column regions and second-conductivity-type column regions formed above the first-conductivity-type layer and serving as a drift region, the first-conductivity-type column regions and the second-conductivity-type column regions forming a super-junction structure, a part of the semiconductor substrate being included in the cell region and other part of the semiconductor substrate being included in the peripheral region;
• a semiconductor element disposed in the cell region;
• element electrodes of the semiconductor element disposed in the cell region;
• an outermost peripheral electrode electrically connected to the semiconductor substrate in the peripheral region;
• a second-conductivity-type layer formed above the super-junction structure in the peripheral region;
• and
• a potential division region formed above the second-conductivity-type layer to electrically connect the element electrodes to the outermost peripheral electrode and also divide a voltage between the element electrodes and the outermost peripheral electrode into a plurality of stages, a part of the potential division region overlapping the peripheral region when viewed from a thickness direction of the semiconductor substrate.