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US 2014/0151784 A1Published application
Semiconductor memory device and method of manufacturing the same
AssigneeSK hynix Inc.
InventorSang Hyon KWAK
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Abstract
The present technology includes a semiconductor memory device, including a channel layer and interlayer insulation layers surrounding the channel layer. The interlayer insulation layers are stacked with a trench interposed therebetween. A seed pattern is formed on a surface of the trench and a metal layer is formed on the seed pattern in the trench.
Claims15
A semiconductor memory device, comprising:
- a channel layer;
- interlayer insulation layers surrounding the channel layer, wherein the interlayer insulation layers are stacked with a trench interposed therebetween;
- a seed pattern formed on a surface of the trench;
- and
- a metal layer formed on the seed pattern in the trench.
2 more elements
A method of manufacturing a semiconductor memory device, the method comprising:
- forming interlayer insulation layers surrounding a channel layer, wherein the interlayer insulation layers are stacked with a trench interposed therebetween;
- forming a seed film on a surface of the trench and on surfaces of the interlayer insulation layers;
- forming a sacrificial pattern in the trench;
- forming a seed pattern in the trench by etching the seed film by using the sacrificial pattern as an etching barrier;
- and
- growing a metal layer from the seed pattern in the trench.
3 more elements
Dependencies are inferred from the claim text.