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US 2014/0151780 A1Published application
Nonvolatile memory device and method of fabricating the same
AssigneeSK hynix Inc.
InventorsSung-Kun PARK, Young-Jun KWON
Life of this patent
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Abstract
A nonvolatile memory device includes a floating gate formed over a substrate, a select gate formed adjacent to the floating gate with a gap defined therebetween, spacers formed on sidewalls of the floating gate and the select gate and filling the gap, a first junction region formed in the substrate adjacent to the floating gate, and a second junction region formed in the substrate adjacent to the select gate.
Claims13
A nonvolatile memory device comprising:
- a floating gate formed over a substrate;
- a select gate formed adjacent to the floating gate with a gap defined therebetween;
- spacers formed on sidewalls of the floating gate and the select gate and filling the gap;
- a first junction region formed in a portion of the substrate adjacent to the floating gate;
- and
- a second junction region formed in a portion of the substrate adjacent to the select gate.
3 more elements
A nonvolatile memory device comprising:
- a plurality of active regions;
- a plurality of gate lines crossing the plurality of active regions;
- junction regions formed in the active regions between the gate lines;
- and
- a first conductive line and a second conductive line respectively connected to one and the other junction regions when viewed on each of the plurality of gate lines,
- wherein each of the plurality of gate lines comprises a plurality of floating gates, a select gate that is adjacent to the plurality of floating gates with gaps defined therebetween, and spacers that are formed on sidewalls of the floating gates and the select gate and fill the gaps.
3 more elements
Dependencies are inferred from the claim text.