Uniform finfet gate height

Abstract

A method including providing fins etched from a semiconductor substrate and covered by an oxide layer and a nitride layer, the oxide layer being located between the fins and the nitride layer, removing a portion of the fins to form an opening, forming a dielectric spacer on a sidewall of the opening, and filling the opening with a fill material, wherein a top surface of the fill material is substantially flush with a top surface of the nitride layer. The method may further include forming a deep trench capacitor in-line with one of the fins, removing the nitride layer to form a gap between the fins and the fill material, wherein the fill material has re-entrant geometry extending over the gap, and removing the re-entrant geometry and causing the gap between the fins and the fill material to widen.

Dependencies are inferred from the claim text.