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AssigneeInternational Business Machines Corporation
InventorsChing-Tzu Chen, Marcin J. Gajek, Simone Raoux
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A method for depositing a material on a graphene layer includes arranging a graphene layer having an exposed substantially planar surface proximate to a magnetron assembly that is operative to emit a plasma plume substantially along a first line, wherein the exposed planar surface of the graphene layer is arranged at an angle that is non-orthogonal to the first line where the first line intersects the exposed planar surface; and emitting the plasma plume from the magnetron assembly such that a layer of deposition material is disposed on the graphene layer without appreciably damaging the graphene layer.
A spintronic transistor device comprising:
A spintronic transistor device comprising:
Dependencies are inferred from the claim text.