FinFET DEVICE WITH DUAL-STRAINED CHANNELS AND METHOD FOR MANUFACTURING THEREOF

Method for manufacturing a dual channel FinFET device having each channel subjected to a mobility enhancement strain, the method comprising

• providing a substrate comprising at least two fin structures separated by an isolation region, each of the fin structures in physical contact with a source region and a drain region, wherein each of the at least two fin structures comprises
• a strained relaxed buffer (SRB) wherein the SRB comprises at least two layers, a SRB1 overlying and in contact with the substrate and a SRB2 overlying and in contact with SRB1 and
• a first upper layer overlying and in contact with the SRB2, said first upper layer being suitable to form a n-type or p-type channel, wherein a composition of the first upper layer and the SRB2 is selected such that the first upper layer of a first fin structure is subjected to a first mobility enhancing strain in an as-grown state, the first mobility enhancing strain being applied in a longitudinal direction from the source region to the drain region
• performing an ion implantation in the first upper layer and at least an upper part of SRB2 of the second fin structure, thereby forming an amorphous buffer layer, then
• performing a re-crystallization by laser anneal of the amorphous buffer layer, thereby forming a strain-relaxed buffer layer of the second fin structure,
• forming a recess in the second fin structure by removing part of the strain-relaxed buffer layer, thereby exposing a remaining strain-relaxed buffer layer, then
• filling the recess in the second fin structure by epitaxial growth of a upper layer on the remaining strain-relaxed buffer layer, wherein a composition of the upper layer is chosen such that the second upper layer is subjected to a second mobility enhancing strain in the as-grown state, the second mobility enhancing strain being applied in a longitudinal direction from the source region to the drain region.

A dual channel FinFET device having each channel subjected to a mobility enhancement strain, the device comprising:

• a substrate comprising at least two fin structures separated by an isolation region, wherein each of the at least two fin structures is in physical contact with a source region and a drain region and
• wherein each of the at least two fin structures comprises a strain relaxed buffer (SRB) overlying and in contact with the substrate, wherein the SRB comprises at least two layers, a SRB1 overlying and in contact with the substrate and a SRB2 overlying and in contact with SRB1,
• wherein a first fin structure further comprises an first upper layer overlying and in contact with the SRB2, said first upper layer is protruding from the substrate and is suitable to form a n-type or p-type channel, wherein the composition of the first upper layer and the SRB2 is selected such that the upper layer of a first fin structure is subjected to a first mobility enhancing strain in the as-grown state, the first mobility enhancing strain being applied in a longitudinal direction from the source region to the drain region,
• wherein an upper part of the SRB2 of a second fin structure is strain-relaxed and the second fin structure further comprises a upper layer overlying and in contact with said strain-relaxed upper part of SRB2, the upper layer protruding from the substrate and being suitable to form a n-type or p-type channel
• wherein the composition of the upper layer is chosen such that the upper layer is subjected to a second mobility enhancing strain in the as-grown state, the second mobility enhancing strain being applied in a longitudinal direction from the source region to the drain region.