Semiconductor and manufacturing method thereof

A manufacturing method of a semiconductor element, comprising:

• providing a base;
• forming an epitaxy layer on the base;
• forming a first well and a second well in the epitaxy layer;
• fully forming an implanting region in the epitaxy layer;
• forming a third well in the epitaxy layer, wherein the third well is located between the first well and the second well, and the step of forming the third well is performed after the step of forming the implanting region;
• respectively forming a first heavily doping region and a second heavily doping region in the first well and the second well, wherein a surface channel is formed between the first heavily doping region and the second heavily doping region, and the implanting region is located between the surface channel and the base and is disposed at a projection region of the first well, the second well and the third well;
• and
• forming a conductive layer above the surface channel.

A manufacturing method of a semiconductor element, comprising:

• providing a base;
• forming an epitaxy layer on the base;
• forming a third well in the epitaxy layer;
• fully forming an implanting region in the epitaxy layer;
• forming a first well and a second well in the epitaxy layer, wherein the third well is located between the first well and the second well, and the step of forming the first well and the second well is performed after the step of forming the implanting region;
• respectively forming a first heavily doping region and a second heavily doping region in the first well and the second well, wherein a surface channel is formed between the first heavily doping region and the second heavily doping region, and the implanting region is located between the surface channel and the base and is disposed at a projection region of the first well, the second well and the third well;
• and
• forming a conductive layer above the surface channel.