Fin-Like Field Effect Transistor (FinFET) Channel Profile Engineering Method And Associated Device

A method comprising:

• forming a fin structure including fins over a substrate;
• forming an isolation feature over the fin structure to define a first fin height of the fins, the fins being isolated from each other by the isolation feature;
• forming a gate structure that includes a dummy gate stack over a portion of the fin structure such that the gate structure traverses each fin, thereby separating a source region and a drain region of each fin, the source region and the drain region defining a channel of each fin therebetween;
• forming epitaxial source/drain features in the source region and drain region of each fin;
• removing the dummy gate stack from the gate structure, thereby forming an opening in the gate structure;
• after removing the dummy gate stack, performing an etching process on the isolation feature to increase the first fin height of the fins to a second fin height;
• and
• after performing the etching process on the isolation feature, forming a metal gate stack in the opening of the gate structure, and
• wherein the forming the epitaxial source/drain features in the source region and drain region of each fin includes:
• forming recesses in each fin in the source region and the drain region;
• and
• epitaxially growing a semiconductor material to fill the recesses.

A method comprising:

• forming a fin over a substrate;
• forming a gate structure including a dummy gate over a portion of the fin, the gate structure traversing the fin, wherein the gate structure separates a source region and a drain region of the fin, a channel being defined between the source region and the drain region;
• removing the dummy gate from the gate structure thereby forming an opening in the gate structure;
• after removing the dummy gate, modifying a profile of the portion of the fin to increase a length of the channel;
• and
• after modifying the profile of the portion of the fine, forming a metal layer in the opening of the gate structure.