Semiconductor Device and Method of Manufacturing a Semiconductor Device

A semiconductor device comprising a transistor formed in a semiconductor substrate having a first main surface, the transistor comprising:

• a source region;
• a drain region;
• a channel region;
• a drift zone;
• and
• a gate electrode at the channel region, the gate electrode configured to control a conductivity of a channel formed in the channel region, the gate electrode being insulated from the channel region by a gate dielectric,
• the channel region and the drift zone disposed along a first direction between the source region and the drain region, the first direction being parallel to the first main surface, the drift zone comprising a superjunction layer stack, the superjunction layer stack comprising n-doped and p-doped layers stacked in a stack direction in an alternating manner, the stack direction being perpendicular with respect to the first main surface, and
• at least one of the source region and the drain region extending to a depth so that a bottom boundary between the source region or the drain region and the semiconductor substrate is disposed beneath a bottom interface between the n-doped and p-doped layers of the layer stack.