Backside cmos compatible biofet with no plasma induced damage

A method of manufacturing a BioFET device, comprising:

• forming a FET device on a semiconductor substrate, wherein the FET device includes a gate structure formed on a first surface of the semiconductor substrate and a channel region in the semiconductor substrate below the gate structure;
• attaching the first surface of the semiconductor substrate to a carrier substrate;
• forming an opening exposing the channel region from a second surface of the semiconductor substrate by removing a portion of the semiconductor substrate;
• forming a sensing film on the channel region of the second surface of the semiconductor substrate in the opening;
• and
• forming a microfluidic channel or microfluidic well over the sensing film.

A method, comprising:

• forming a first BioFET device including:
• forming 22 a gate structure on a first side of a semiconductor substrate;
• forming a source region and a drain region in the semiconductor substrate adjacent to the gate structure;
• forming a channel region interposing the source and drain regions and underlying the gate structure;
• attaching the first BioFET device to a carrier substrate;
• removing a portion of a second side of the substrate to expose at least a portion of the channel region;
• forming a sensing film directly on and covering at least a portion of the exposed channel region;
• and
• forming at least one of a microfluidic channel and a microfluidic well over the sensing film.