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US 2014/0151754 A1Published application
Solid-state image pickup device and method of manufacturing same
AssigneeSony Corporation
InventorShinichi Arakawa
Life of this patent
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Abstract
A solid-state image pickup device including: a photoelectric conversion section configured to convert incident light into a signal charge; a transfer transistor configured to read the signal charge from the photoelectric conversion section and transfer the signal charge; and an amplifying transistor configured to amplify the signal charge read by the transfer transistor, wherein a compressive stress film having a compressive stress is formed on the amplifying transistor.
Claims20
A solid-state imaging device, comprising:
- a semiconductor substrate;
- a pixel section having a plurality of pixels in the substrate, each which includes at least one photoelectric conversion portion and an amplifier portion having one or more diffusion layers and a gate electrode;
- and
- for each pixel, a film extending from the gate electrode to each of the diffusion layers.
1 more element
A method of producing a solid state imaging device, comprising:
- providing a semiconductor substrate;
- forming a pixel section having a plurality of pixels in the substrate, each which includes at least one photoelectric conversion portion and an amplifier portion having one or more diffusion layers and a gate electrode;
- and
- for each pixel, forming a film extending from the gate electrode to each of the diffusion layers.
1 more element
Dependencies are inferred from the claim text.