Solid-state imaging apparatus, manufacturing method thereof, and electronic information device

A solid-state imaging apparatus comprising a photoelectric conversion element formed in a first conductivity type semiconductor substrate, for photoelectrically converting incident light to generate signal charges, in which the signal charges generated by the photoelectric conversion element are converted into an image signal by signal processing which is outputted,

• the solid-state imaging apparatus further comprising a transfer transistor formed on a first main surface of the semiconductor substrate, for transferring the signal charges generated by the photoelectric conversion element to outside the photoelectric conversion element,
• wherein the transfer transistor comprises a gate electrode located in such a manner to extend from a region occupied by the transfer transistor on the first main surface to a region occupied by the photoelectric conversion element on the first main surface, and is disposed over the regions, and
• wherein at least one layer constituting the gate electrode of the transfer transistor is comprised of a reflection film having a reflection rate greater than that of polysilicon, or a reflection film having a reflection rate greater than that of polysilicon is formed on the gate electrode of the transfer transistor.