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US 2014/0151744 A1Published application
Power semiconductor devices
AssigneeSamsung Electronics Co., Ltd.
InventorsBaik-woo LEE, Seong-woon BOOH
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Abstract
A power semiconductor device may comprise: a lower structure; a solder layer on the lower structure; a semiconductor structure on the solder layer; a contact layer on the semiconductor structure; a pad layer on the contact layer; and/or a wire between the pad layer and the lower structure. The solder layer may be electrically connected to a first electrode of the semiconductor structure.
Claims15
A power semiconductor device, comprising:
- a lower structure;
- a solder layer on the lower structure;
- a semiconductor structure on the solder layer;
- a contact layer on the semiconductor structure;
- a pad layer on the contact layer;
- and
- a wire between the pad layer and the lower structure;
- wherein the solder layer is electrically connected to a first electrode of the semiconductor structure.
5 more elements
Dependencies are inferred from the claim text.