Lateral semiconductor light emitting diodes having large area contacts
AssigneeCree, Inc.
InventorsMatthew Donofrio, James Ibbetson, Zhimin James Yao
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Abstract
Light emitting diodes include a diode region having first and second opposing faces that include therein an n-type layer and a p-type layer, an anode contact that ohmically contacts the p-type layer and extends on the first face, and a cathode contact that ohmically contacts the n-type layer and also extends on the first face. The anode and cathode contacts extend on the first face to collectively cover substantially all of the first face. A small gap may be provided between the contacts.
Claims39
A light emitting diode (LED) comprising:
- a diode region having first and second opposing faces and including therein an n-type layer and a p-type layer;
- at least one dielectric layer on said first face;
- a first metal layer on said first face and comprising a portion that passes through said at least one dielectric layer to electrically connect said first metal layer to said p-type layer;
- a second metal layer on said first face and comprising a portion that passes through said at least one dielectric layer to electrically connect said second metal layer to said n-type layer;
- and
- a transparent contact between said first metal layer and said diode region.
A light emitting diode (LED) comprising:
- a diode region having first and second opposing faces and including therein an n-type layer and a p-type layer;
- an anode pad that electrically contacts said p-type layer and extends on the first face;
- a cathode pad that electrically contacts the n-type layer and also extends on the first face, such that a gap is defined that extends along the first face between the anode and cathode pads;
- and
- a filling layer in the gap.
A light emitting diode (LED) comprising:
- an n-type semiconductor layer;
- a p-type semiconductor layer;
- an anode contact electrically contacting said p-type layer;
- a cathode contact electrically contacting said n-type layer and electrically isolated from said anode;
- wherein said cathode contact overlaps said anode contact and contacts said n-type layer.
Dependencies are inferred from the claim text.