Method for Producing an Optoelectronic Semiconductor Component and Such a Semiconductor Component

A method for producing an optoelectronic semiconductor component, the method comprising:

• providing a semiconductor chip that comprises an active layer configured to generate radiation;
• providing a carrier substrate that comprises a mounting region for the semiconductor chip and a first opening, which is formed in the mounting region of the carrier substrate;
• mounting the semiconductor chip on the mounting region of the carrier substrate;
• applying an electrically insulating layer to a side of the carrier substrate remote from the semiconductor chip in such a way that the electrically insulating layer completely fills the first opening in the carrier substrate;
• forming a second opening in the electrically insulating layer, the second opening being formed in the region of the first opening in the carrier substrate;
• and
• applying an electrically conductive layer on a side of the electrically insulating layer remote from the carrier substrate in such a way that the electrically conductive layer fills the second opening in the electrically insulating layer in the form of a via.

An optoelectronic semiconductor component, comprising:

• a semiconductor chip;
• a carrier substrate;
• wherein the semiconductor chip comprises an active layer configured to generate radiation;
• wherein the carrier substrate comprises a mounting region for the semiconductor chip and a first opening, which is formed in the mounting region of the carrier substrate;
• wherein the semiconductor chip is arranged on the mounting region of the carrier substrate;
• wherein an electrically insulating layer is applied to the side of the carrier substrate remote from the semiconductor chip, the insulating layer filling the first opening in the carrier substrate;
• wherein a second opening is formed in the electrically insulating layer in the region of the first opening in the carrier substrate;
• wherein an electrically conductive layer is arranged on a side of the electrically insulating layer remote from the carrier substrate, the conductive layer filling the second opening in the electrically insulating layer in the form of a via;
• and
• wherein the mounting region of the carrier substrate is free of the electrically insulating layer and the electrically conductive layer.

A method for producing an optoelectronic semiconductor component, the method comprising:

• A1) providing a semiconductor chip that comprises an active layer configured to generate radiation;
• A2) providing a carrier substrate which comprises a mounting region for the semiconductor chip and a first opening, which is formed in the mounting region of the carrier substrate;
• B) mounting the semiconductor chip on the mounting region of the carrier substrate;
• C) applying an electrically insulating layer to a side of the carrier substrate remote from the semiconductor chip in such a way that the electrically insulating layer completely fills the first opening in the carrier substrate;
• D) forming a second opening in the electrically insulating layer, the second opening being formed in the region of the first opening in the carrier substrate;
• and
• E) applying an electrically conductive layer on a side of the electrically insulating layer remote from the carrier substrate in such a way that the electrically conductive layer fills the second opening in the electrically insulating layer in the form of a via, wherein the method steps B) to E) are performed in the claimed sequence.