US 2014/0151716 A1 · PROCESS FOR THE MANUFACTURE OF A DOPED III-N BULK CRYSTAL AND A FREE-STANDING III-N SUBSTRATE, AND DOPED III-N BULK CRYSTAL AND FREE-STANDING III-N SUBSTRATE AS SUCH

Abstract

A process for producing a doped III-N bulk crystal, wherein III denotes at least one element of the main group III of the periodic system, selected from Al, Ga and In, wherein the doped crystalline III-N layer or the doped III-N bulk crystal is deposited on a substrate or template in a reactor, and wherein the feeding of at least one dopant into the reactor is carried out in admixture with at least one group III material. In this manner, III-N bulk crystals and III-N single crystal substrates separated therefrom can be obtained with a very homogeneous distribution of dopants in the growth direction as well as in the growth plane perpendicular thereto, a very homogeneous distribution of charge carriers and/or of the specific electric resistivity in the growth direction as well as in the growth plane perpendicular thereto, and a very good crystal quality.

Claims18

Dependent claims

A doped, epitaxially grown III-N bulk crystal, wherein III denotes at least one element of the main group III of the periodic system selected from Al, Ga and In, wherein the doped III-N bulk crystal satisfies at least one of the following conditions (a) to (c):

(a) in a micro-Raman mapping on a plane
(i) parallel to a growth plane and/or
(ii) in a growth direction
a standard deviation of the measured frequency positions of the LPP+-mode
in case of (i) is 5% or lower, and
in case of (ii) is 10% or lower:
(b) in an MDP mapping on a plane
(i) parallel to a growth plane and/or
(ii) in a growth direction
a standard deviation of the photoconductivity signals
in case of (i) is 5% or lower, and
in case of (ii) is 10% or lower;
(c) in a micro photoluminescence mapping on a plane
(i) parallel to a growth plane and/or
(ii) in a growth direction
a standard deviation of the line width of the D0X transition
in case of (i) is 5% or lower, and
in case of (ii) is 10% or lower.

15 more elements

A free-standing doped III-N substrate, wherein III denotes at least one element of the main group III of the periodic system selected from Al, Ga and In, wherein the free-standing doped III-N substrate satisfies at least one of the following conditions (a) to (c):

(a) in a micro-Raman mapping on a plane
(i) parallel to a growth plane and/or
(ii) in a growth direction
a standard deviation of the measured frequency positions of the LPP+-mode
in case of (i) is 5% or lower, and
in case of (ii) is 5% or lower;
(b) in an MDP mapping on a plane
(i) parallel to a growth plane and/or
(ii) in a growth direction
a standard deviation of the photoconductivity signals
in case of (i) is 5% or lower, and
in case of (ii) is 5% or lower;
(c) in a micro photoluminescence mapping on a plane
(i) parallel to a growth plane and/or
(ii) in a growth direction
a standard deviation of the line width of the D0X transition
in case of (i) is 5% or lower, and
in case of (ii) is 5% or lower.

15 more elements

Dependencies are inferred from the claim text.

Facts

Application

14/173,336Filed 5 Feb 2014

Priority

9 Aug 2006

Published

5 Jun 2014

Term ends

Not estimatedThe source records don’t support an estimate.

Classification10 codes

H10D 62/8503
Being Group III-V materials, e.g. GaAs: nitride Group III-V materials, e.g. AlN or GaN
C30B 25/00
Single-crystal growth by chemical reaction of reactive gases
C30B 25/02
Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth: epitaxial-layer growth
C30B 25/165
Controlling or regulating: the flow of the reactive gases

Family

Application60/836,370Us provisional application · filed 9 Aug 2006

Application11/835,669Division · filed 8 Aug 2007

Application14/173,336Division

Application11/835,669Continuation

US 2008/0083910 A1Published application

US 8,778,078 B2Related patent

US 9,461,121 B2Related patent

US 2014/0151716 A1This patent

From the US filing history. Foreign family members aren’t listed.

Process for the manufacture of a doped iii-n bulk crystal and a free-standing iii-n substrate, and doped iii-n bulk crystal and free-standing iii-n substrate as such

Life of this patent

Process for the manufacture of a doped iii-n bulk crystal and a free-standing iii-n substrate, and doped iii-n bulk crystal and free-standing iii-n substrate as such

Life of this patent

Abstract

Claims18