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US 2014/0151715 A1Published application
Light emitting diode with nanostructured layer and methods of making and using
AssigneeWostec, Inc.
InventorsValery K. Smirnov, Dmitry S. Kibalov
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Abstract
A light emitting diode has a plurality of layers including at least two semiconductor layers. A first layer of the plurality of layers has a nanostructured surface which includes a quasi-periodic, anisotropic array of elongated ridge elements having a wave-ordered structure pattern, each ridge element having a wavelike cross-section and oriented substantially in a first direction.
Claims20
A light emitting diode, comprising:
- a plurality of layers including at least two layers, wherein a first layer of the plurality of layers has a nanostructured surface, the nanostructured surface comprising a quasi-periodic, anisotropic array of elongated ridge elements having a wave-ordered structure pattern, each ridge element having a wavelike cross-section and oriented substantially in a first direction.
A hard nanomask, comprising:
- a plurality of elongated elements formed from an aluminum-containing semiconductor material, other than pure aluminum nitride, and disposed in a quasi-periodic, anisotropic array having a wave-ordered structure pattern and a wavelike cross-section, at least some of the elongated elements having the following structure in cross-section:
- an inner region of the aluminum-containing semiconductor material and a first outer region containing aluminum nitride covering a first portion of the inner region.
A method of making a light-emitting semiconductor device, the method comprising:
- depositing a layer of amorphous silicon on a surface of an aluminum-containing semiconductor layer;
- irradiating a surface of the amorphous silicon with an oblique beam of nitrogen ions to form a wave-ordered structure in the layer of amorphous silicon;
- and
- further irradiating the surface of the amorphous silicon with an oblique beam of nitrogen ions to transfer the wave-ordered structure to a surface of the aluminum-containing semiconductor layer forming a nanomask, the nanomask comprising a quasi-periodic, anisotropic array of elongated elements having a wave-ordered structure pattern and a wave-like cross-section.
1 more element
Dependencies are inferred from the claim text.