Method of growing nitride semiconductor layer, nitride semiconductor device, and method of fabricating the same
AssigneeSeoul Viosys Co., Ltd.
InventorsWoo Chul Kwak, Seung Kyu Choi, Jae Hoon Song, Chae Hon Kim, Jung Whan Jung
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Abstract
Exemplary embodiments of the present invention provide a method of growing a nitride semiconductor layer including growing a gallium nitride-based defect dispersion suppressing layer on a gallium nitride substrate including non-defect regions and a defect region disposed between the non-defect regions, and growing a gallium nitride semiconductor layer on the defect dispersion suppressing layer.
Claims27
A method of growing a nitride semiconductor layer, the method comprising:
- growing a gallium nitride-based defect dispersion suppressing layer on a gallium nitride substrate comprising non-defect regions and a defect region disposed between the non-defect regions;
- and
- growing a gallium nitride semiconductor layer on the defect dispersion suppressing layer.
A method of growing a gallium nitride semiconductor layer on a gallium nitride substrate, the method comprising:
- preparing the gallium nitride substrate by growing a gallium nitride crystal on seed substrates using hydride vapor phase epitaxy (HVPE), followed by slicing the gallium nitride crystal;
- growing a gallium nitride-based defect dispersion suppressing layer on the gallium nitride substrate using metal organic chemical vapor deposition;
- and
- growing a gallium nitride semiconductor layer on the defect dispersion suppressing layer.
A nitride semiconductor device, comprising:
- a gallium nitride substrate comprising non-defect regions and a defect region disposed between the non-defect regions;
- a gallium nitride-based defect dispersion suppressing layer disposed on the gallium nitride substrate;
- and
- a gallium nitride semiconductor layer disposed on the defect dispersion suppressing layer.
Dependencies are inferred from the claim text.