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US 2014/0151712 A1Published application
Enhancement-mode high electron mobility transistor structure and method of making same
AssigneeIqe Kc, LLC
InventorsYu Cao, Oleg Laboutin, Wayne Johnson
Life of this patent
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Abstract
An epitaxial structure, such as an enhancement-mode high electron mobility transistor (HEMT) includes a first barrier layer over an aluminum gallium nitride channel layer. The first barrier layer is formed at a first temperature and is overlaid by a second barrier layer formed at a second temperature that is lower than that of the first temperature. The first barrier layer acts as an etch stop when forming a gate recess in the second barrier layer by a wet or dry etching.
Claims23
An epitaxial structure, comprising:
- a) a substrate;
- b) a buffer layer on the substrate, the buffer layer including gallium nitride;
- c) a channel layer over the buffer layer, the channel layer consisting essentially of InxGa1-xN, where 0≦x≦1, and wherein the channel layer includes a 2-dimensional electron gas region distal to the buffer layer;
- d) a first AlN barrier layer over the channel layer formed at a first temperature;
- and
- e) a second AlN barrier layer on the first barrier layer, the second barrier being formed at a second temperature, the second temperature being lower than the first temperature, at which the first barrier layer is formed.
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A method of forming a epitaxial structure, comprising the steps of:
- a) forming a substrate;
- b) forming a buffer layer on the substrate;
- c) forming a channel layer over the buffer layer, the channel layer consisting essentially of InxGa1-xN, where 0≦x≦1;
- d) forming a first AlN barrier layer over the channel, the first barrier layer being formed at a first temperature;
- e) forming a second AlN barrier layer over the first barrier layer, the second barrier being formed at a temperature lower than that of the first temperature, whereby a two dimensional electron gas forms between the channel and the first barrier layer, and whereby a 2-dimensional electron gas region is formed in the channel layer distal to the buffer layer as a result of forming at least one of the first and second barrier layers;
- and
- f) forming a recess in the second barrier layer.
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Dependencies are inferred from the claim text.