Stacked Gate Structure, Metal-Oxide-Semiconductor Including the Same, and Method for Manufacturing the Stacked Gate Structure
AssigneeNational Chiao Tung University
InventorsYueh-Chin LIN, Edward Yi CHANG, Ting-Wei CHUANG
Life of this patent
Estimating the term…
Abstract
The invention provides a stacked gate structure and metal-oxide-semiconductor including the same, and method for manufacturing the stacked gate structure. The stacked gate structure comprises a substrate, a semiconductor layer positioned on the substrate, a gate dielectric positioned on the semiconductor layer, and a gate electrode layer positioned on the gate dielectric, which the gate dielectric comprises a composite oxide layer composed of lanthanum oxide (La2O3) and hafnium oxide (HfO2).
Claims13
A stacked gate structure of a transistor, comprising:
- a substrate;
- a semiconductor layer positioned on the substrate;
- a gate dielectric layer positioned on the semiconductor layer, wherein the gate dielectric layer comprises a composite oxide layer composed of lanthanum oxide (La2O3) and hafnium oxide (HfO2);
- and
- a gate electrode layer positioned on the gate dielectric layer.
A method for manufacturing a stacked gate structure of a transistor, comprising the steps of:
- providing a semiconductor layer having a first surface and a second surface;
- forming a plurality of hafnium oxide layers and lanthanum oxide layers on the first surface of the semiconductor layer;
- conducting rapid thermal annealing of the hafnium oxide layers and lanthanum oxide layers to form a gate dielectric layer having a composite oxide layer;
- forming a gate electrode layer on the gate dielectric layer;
- forming an ohmic contact layer in contact with the second surface of the semiconductor;
- and
- forming a back-metal layer in contact with the ohmic contact layer, but not with the semiconductor layer.
Dependencies are inferred from the claim text.