Semiconductor Device And Method For Manufacturing The Same
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorShunpei Yamazaki
Life of this patent
Estimating the term…
Abstract
An object is to manufacture a semiconductor device with high reliability by providing the semiconductor device including an oxide semiconductor with stable electric characteristics. In a transistor including an oxide semiconductor layer, a gallium oxide film is used for a gate insulating layer and made in contact with an oxide semiconductor layer. Further, gallium oxide films are provided so as to sandwich the oxide semiconductor layer, whereby reliability is increased. Furthermore, the gate insulating layer may have a stacked structure of a gallium oxide film and a hafnium oxide film.
Claims21
(canceled)
A semiconductor device comprising:
- a first gate electrode over a substrate;
- a first metal oxide film over the first gate electrode;
- an oxide semiconductor layer over the first metal oxide film;
- a source electrode and a drain electrode electrically connected to the oxide semiconductor layer;
- a second metal oxide film over the oxide semiconductor layer, the source electrode, and the drain electrode;
- and
- a second gate electrode over the second metal oxide film,
- wherein the first metal oxide film and the second metal oxide film each comprises a film containing gallium.
A semiconductor device comprising:
- a first metal oxide film over a substrate;
- an oxide semiconductor layer over the first metal oxide film;
- a source electrode and a drain electrode electrically connected to the oxide semiconductor layer;
- a second metal oxide film over the oxide semiconductor layer, the source electrode, and the drain electrode;
- and
- a gate electrode over the second metal oxide film,
- wherein the first metal oxide film and the second metal oxide film each comprises a film containing gallium.
A semiconductor device comprising:
- a gate electrode over a substrate;
- a first metal oxide film over the gate electrode;
- an oxide semiconductor layer over the first metal oxide film;
- a source electrode and a drain electrode electrically connected to the oxide semiconductor layer;
- and
- a second metal oxide film over the oxide semiconductor layer, the source electrode, and the drain electrode,
- wherein the first metal oxide film and the second metal oxide film each comprises a film containing gallium, and
- wherein the first metal oxide film is formed of a stacked structure including the film containing gallium and a film containing hafnium, and the film containing gallium is in contact with the oxide semiconductor layer.
Dependencies are inferred from the claim text.