Light-emitting display device and method for manufacturing the same
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsShunpei Yamazaki, Kaoru Hatano
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Abstract
Provided is a method to manufacture a light-emitting display device in which a contact hole for the electrical connection of the pixel electrode and one of the source and drain electrode of a transistor and a contact hole for the processing of a semiconductor layer are formed simultaneously. The method contributes to the reduction of a photography step. The transistor includes an oxide semiconductor layer where a channel formation region is formed.
Claims10
A light-emitting display device comprising a pixel over a flexible substrate, the pixel comprising:
- a first thin film transistor comprising:
- a first oxide semiconductor layer;
- and
- a first source electrode and a first drain electrode which are electrically connected to the first oxide semiconductor layer;
- a second thin film transistor comprising:
- a gate electrode;
- and
- a second source electrode and a second drain electrode with a second oxide semiconductor layer between the gate electrode and the second source electrode and between the gate electrode and the second drain electrode, wherein the second source electrode and the second drain electrode are electrically connected to the second oxide semiconductor layer;
- and
- a light-emitting element comprising:
- a first pixel electrode electrically connected to one of the second source electrode and the second drain electrode;
- an organic compound layer over the first pixel electrode;
- and
- a second pixel electrode over the organic compound layer,
- wherein the gate electrode is electrically connected to one of the first source electrode and the first drain electrode, and
- wherein the first pixel electrode is in direct contact with a side surface of the second oxide semiconductor layer in the pixel.
A light-emitting display device comprising a pixel over a flexible substrate, the pixel comprising:
- a first thin film transistor comprising:
- a first oxide semiconductor layer;
- and
- a first source electrode and a first drain electrode which are electrically connected to the first oxide semiconductor layer;
- a second thin film transistor comprising:
- a gate electrode;
- and
- a second source electrode and a second drain electrode with a second oxide semiconductor layer between the gate electrode and the second source electrode and between the gate electrode and the second drain electrode, wherein the second source electrode and the second drain electrode are electrically connected to the second oxide semiconductor layer;
- a light-emitting element comprising:
- a first pixel electrode electrically connected to one of the second source electrode and the second drain electrode;
- an organic compound layer over the first pixel electrode, and
- a second pixel electrode over the organic compound layer;
- and
- a capacitor comprising:
- a capacitor wiring electrically connected to the gate electrode;
- and
- a dielectric layer over the capacitor wiring,
- wherein the gate electrode is electrically connected to one of the first source electrode and the first drain electrode, and
- wherein the first pixel electrode is in direct contact with a side surface of the second oxide semiconductor layer in the pixel.
Dependencies are inferred from the claim text.