3d rfics with ultra-thin semiconductor materials
AssigneeInternational Business Machines Corporation
InventorsSHU-JEN HAN, ALBERTO VALDES GARCIA
Life of this patent
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Abstract
Three-dimensional integrated circuits include an active layer having one or more active components formed with carbon-based channel material; a passive layer monolithically formed with the active layer, having one or more sub-layers and each sub-layer having one or more passive components, where the passive components have monolithically formed vertical interconnects to components on other layers; and a surface layer monolithically formed with the passive layer, including one or more surface components connected to one or more of the passive components through monolithically formed vias.
Claims6
A three-dimensional integrated circuit, comprising:
- an active layer comprising one or more active components formed with carbon-based channel material;
- a passive layer monolithically formed with the active layer, comprising one or more sub-layers, each sub-layer having one or more passive components, wherein the passive components have monolithically formed vertical interconnects to components on other layers;
- and
- a surface layer monolithically formed with the passive layer, comprising one or more surface components connected to one or more of the passive components through monolithically formed vias.
A three-dimensional radio frequency integrated circuit, comprising:
- an active layer comprising one or more active components formed with carbon-based channel material;
- a passive layer monolithically formed with the active layer, comprising one or more sub-layers, each sub-layer having one or more passive components, wherein the passive components have monolithically formed vertical interconnects to components on other layers and wherein the passive layer does not include through-silicon vias;
- and
- a surface layer monolithically formed with the passive layer, comprising an antenna connected to one or more of the passive components through monolithically formed vias.
Dependencies are inferred from the claim text.