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US 2014/0151636 A1Published application
Single-walled carbon nanotubes/quantum dot hybrid structures and methods of making and use of the hybrid structures
AssigneeUniversity of Georgia Research Foundation, Inc.
InventorsMarcus D. Lay, Pornnipa Vichchulada, Darya Asheghali
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Abstract
Briefly described, embodiments of the present disclosure relate to structures including single-walled carbon nanotube/quantum dot networks, devices including the structures, and methods of making devices including the single-walled carbon nanotube/quantum dot networks.
Claims27
A structure comprising:
- a substrate,
- a network of single-walled carbon nanotubes (SWCNTs), and
- a plurality of quantum dots (QDs) on the network of SWCNT, wherein the quantum dots are in contact with the SWCNTs in the network providing a SWCNT/QD network.
A field effect transistor (FET) comprising:
- a substrate,
- an electrode,
- a network of single-walled carbon nanotubes (SWCNTs), and
- a plurality quantum dots disposed on the network of SWCNTs, wherein the quantum dots are in contact with the SWCNTs in the network, providing a SWCNT/QD network.
1 more element
A method of making a device comprising:
- providing a substrate;
- forming a network of single-walled carbon nanotubes (SWCNTs) on the substrate;
- depositing a plurality of semiconductive quantum dots on the network of SWCNTs to form a SWCNT/QD network.
A method of increasing the ON-STATE/OFF-STATE ratio of a field effect transistor (FET) having a network of single-walled carbon nanotubes (SWCNTs) comprising:
- depositing a plurality of semiconductive quantum dots on the network of SWCNTs, wherein the quantum dots act as Vg-tunable Schottky contacts reducing OFF-STATE of the FET in a Vg range+/−5V.
Dependencies are inferred from the claim text.