Method for fabricating a light emitting diode (led) die having protective substrate

A method for fabricating a vertical light emitting diode (VLED) die comprising:

• providing a carrier substrate;
• forming an epitaxial structure on the carrier substrate comprising a first type semiconductor layer, a multiple quantum well (MQW) layer on the first type semiconductor layer configured to emit light, and a second type semiconductor layer on the multiple quantum well (MQW) layer;
• forming a plurality of trenches through the epitaxial structure;
• forming a reflector layer on the second type semiconductor layer;
• forming a seed layer on the reflector layer and in the trenches;
• forming a first substrate on the seed layer having a first surface, an opposing second surface, a first width W1 and a first area;
• forming a second substrate on the second surface of the first substrate, the second substrate having a second area, and a second width W2, with the first area and the first width W1 of the first substrate greater than the second area and the second width W2 of the second substrate;
• and
• removing the carrier substrate.

A light emitting diode die comprising:

• an epitaxial stack comprising a first-type semiconductor layer, a multiple quantum well (MQW) layer on the first-type semiconductor layer configured to emit light, and a second-type semiconductor layer on the multiple quantum well (MQW) layer;
• a substrate comprising a deposited material on the first-type semiconductor layer having a first surface, an opposing second surface and a first area greater than an area of the first-type semiconductor layer;
• a seed layer on the first surface of the substrate configured to assist deposition of the substrate on the first-type semiconductor layer;
• and
• the substrate configured to protect the epitaxial structure during attachment of the light emitting diode die to a LED substrate.