US 2014/0151634 A1 · LOW DROOP LIGHT EMITTING DIODE STRUCTURE ON GALLIUM NITRIDE SEMIPOLAR SUBSTRATES

Abstract

A light emitting diode structure of (Al,Ga,In)N thin films grown on a gallium nitride (GaN) semipolar substrate by metal organic chemical vapor deposition (MOCVD) that exhibits reduced droop. The device structure includes a quantum well (QW) active region of two or more periods, n-type superlattice layers (n-SLs) located below the QW active region, and p-type superlattice layers (p-SLs) above the QW active region. The present invention also encompasses a method of fabricating such a device.

Claims25

Dependent claims

An opto-electronic device structure, comprising:

a III-nitride light-emitting device structure, grown on or above a semipolar plane surface of a Group-III nitride substrate, wherein the light-emitting device structure has an External Quantum Efficiency (EQE) droop of 15% percent or less, as compared to a peak EQE, at a current density of 35 Amps per centimeter square (A/cm2).

Dependencies are inferred from the claim text.

Facts

Application

14/174,581Filed 6 Feb 2014

Priority

10 Jun 2011

Published

5 Jun 2014

Term ends

Not estimatedThe source records don’t support an estimate.

Classification12 codes

H10H 20/812
Having quantum effect structures or superlattices, e.g. tunnel junctions: within the light-emitting regions, e.g. having quantum confinement…
H10H 20/013
Of bodies, e.g. forming semiconductor layers: having light-emitting regions comprising only Group III-V materials
H10H 20/0137
Having light-emitting regions comprising only Group III-V materials: the light-emitting regions comprising nitride materials
H10H 20/817
Bodies: characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous

Family

Application61/495,829Us provisional application · filed 10 Jun 2011

Application13/493,430Continuation · filed 11 Jun 2012

Application14/174,581Continuation

US 2012/0313076 A1Published application

US 8,686,397 B2Related patent

US 2014/0151634 A1This patent

From the US filing history. Foreign family members aren’t listed.

Low droop light emitting diode structure on gallium nitride semipolar substrates

Life of this patent

Low droop light emitting diode structure on gallium nitride semipolar substrates

Life of this patent

Abstract

Claims25