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US 2014/0151633 A1Published application
Light emitting diode chip having wavelength converting layer and method of fabricating the same, and package having the light emitting diode chip and method of fabricating the same
AssigneeSeoul Semiconductor Co., Ltd.
InventorsJung Hwa JUNG, Bang Hyun KIM
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Abstract
An exemplary embodiment of the present invention discloses a light-emitting diode (LED) chip including a semiconductor stacked structure including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer, a first electrode disposed on the semiconductor stacked structure, a wavelength converting layer disposed on the semiconductor stacked structure, and a transparent resin disposed on the wavelength converting layer.
Claims14
A light-emitting diode (LED) chip, comprising:
- a semiconductor stacked structure comprising a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer;
- a first electrode disposed on the semiconductor stacked structure;
- a wavelength converting layer disposed on the semiconductor stacked structure;
- and
- a transparent resin disposed on the wavelength converting layer.
2 more elements
A light-emitting diode (LED) package, comprising:
- a mount;
- and
- an LED chip disposed on the mount, wherein the LED chip comprises:
- a semiconductor stacked structure comprising a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer;
- a first electrode disposed on the semiconductor stacked structure;
- a wavelength converting layer disposed on the semiconductor stacked structure;
- and
- a transparent resin disposed on the wavelength converting layer.
5 more elements
Dependencies are inferred from the claim text.