Protection for the epitaxial structure of metal devices

A vertical light-emitting diode (VLED) die comprising:

• a metal substrate;
• an epitaxial structure disposed above the metal substrate, comprising:
• a p-GaN layer coupled to the metal substrate;
• a multiple well quantum (MQW) layer for emitting light coupled to the p-doped layer;
• and
• an n-GaN layer coupled to the MQW layer;
• an electrically non-conductive material surrounding the epitaxial structure except for an upper surface of the n-GaN layer and a portion of the p-GaN layer coupled to the metal substrate;
• and
• an insulative layer disposed between the epitaxial structure and the electrically non-conductive material.

A semiconductor die comprising:

• a metal substrate;
• a p-doped layer coupled to the metal substrate;
• a multiple quantum well (MQW) layer disposed above the p-doped layer;
• an n-doped layer disposed above the MQW layer;
• an electrically non-conductive material substantially covering at least lateral surfaces of the MQW layer;
• and
• an insulative layer disposed between the MQW layer and the electrically non-conductive material.