Confined resistance variable memory cells and methods
AssigneeMicron Technology, Inc.
InventorZailong Bian
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Abstract
Methods, devices, and systems associated with resistance variable memory device structures are described herein. In one or more embodiments, a method of forming a confined resistance variable memory cell structure includes forming a resistance variable material such that a first unmodified portion of the resistance variable material contacts a bottom electrode and a second unmodified portion of the resistance variable material contacts a top electrode.
Claims21
1-20. (canceled)
A confined resistance variable memory cell, comprising:
- a via in a structure that includes a bottom electrode, a top electrode, and a dielectric material between the bottom electrode and the top electrode;
- a resistance variable material in the via, wherein the resistance variable material contacts the top electrode and the bottom electrode.
A confined resistance variable memory cell, comprising:
- a resistance variable material formed in a via, where the resistance variable material contacts a bottom electrode with an unmodified portion of the resistance variable material and contacts a top electrode with an unmodified portion of the resistance variable material;
- and
- a capping material formed over the resistance variable material.
A confined resistance variable memory cell, comprising:
- a structure that includes a bottom electrode, a top electrode, and a dielectric material between the bottom electrode and the top electrode;
- a via in the dielectric material;
- and
- a resistance variable material in the via, where a first unmodified portion of the resistance variable material contacts the bottom electrode and a second unmodified portion of the resistance variable material contacts the top electrode.
Dependencies are inferred from the claim text.