Semiconductor device and method of manufacturing the same

A method of manufacturing a semiconductor device, the method comprising:

• forming a conductive layer on a resistor region of a substrate including a cell array region and the resistor region;
• forming trenches by etching the conductive layer;
• forming sacrificial layers in the trenches;
• alternately stacking first material layers and second material layers on the conductive layer and the sacrificial layers;
• forming first through regions and second through regions through the first material layers and the second material layers to expose the sacrificial layers;
• removing the sacrificial layers;
• and
• forming resistive layers, each resistive layer including a first region, a second region and a third region, wherein the first region is disposed in each of the first throuoh regions, the second through region is disposed in each of the second through regions, and a third region is disposed in each of the trenches.