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US 2014/0151626 A1Published application
Selector Device Using Low Leakage Dielectric Mimcap Diode
AssigneeIntermolecular, Inc.
InventorPrashant B. Phatak
Life of this patent
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Abstract
MIMCAP diodes are provided that can be suitable for memory device applications, such as current selector devices for cross point memory array. The MIMCAP diodes can have lower thermal budget as compared to Schottky diodes and controllable lower barrier height and lower series resistance as compared to MIMCAP tunneling diodes. The MIMCAP diode can include a barrier height modification layer, a low leakage dielectric layer and a high leakage dielectric layer. The layers can be sandwiched between two electrodes.
Claims20
A device comprising
- a first layer, wherein the first layer is operable as a first electrode;
- a second layer disposed above the first layer, wherein the second layer comprises a dielectric layer;
- a third layer disposed above the first layer, wherein the third layer comprises a dielectric layer, wherein the second layer has a different band gap than the third layer;
- a fourth layer disposed above the first layer, wherein the fourth layer comprises a dielectric layer, wherein the leakage current of the fourth layer is higher than that of the third layer;
- a fifth layer disposed above the first layer, wherein the fifth layer is operable as a second electrode;
- wherein the second, third and fourth layers are operable to have a higher current flow when biased in a first polarity and a lower current flow when biased in a second polarity;
- wherein the second polarity is opposite of the first polarity.
4 more elements
A memory array comprising
- a first plurality of conductive lines;
- a second plurality of conductive lines, wherein the second plurality of conductive lines is forming an angle with the first plurality of conductive lines;
- a plurality of elements disposed at the cross points of the first and second plurality of conductive lines, wherein each element comprises
- a first layer, wherein the first layer is operable as a first electrode;
- a second layer disposed above the first layer, wherein the second layer comprises a dielectric layer;
- a third layer disposed above the first layer, wherein the third layer comprises a dielectric layer, wherein the second layer has a different band gap than the third layer;
- a fourth layer disposed above the first layer, wherein the fourth layer comprises a dielectric layer, wherein the leakage current of the fourth layer is higher than that of the third layer;
- a fifth layer disposed above the first layer, wherein the fifth layer is operable as a second electrode;
- wherein the second, third and fourth layers are operable to have a higher current flow when biased in a first polarity and a lower current flow when biased in a second polarity;
- wherein the second polarity is opposite of the first polarity;
- a resistive switching memory element disposed above the fifth layer;
- a sixth layer disposed above the first layer, wherein the sixth layer is operable as a third electrode.
9 more elements
A method to form a device, the method comprising
- forming a first layer, wherein the first layer is operable as an electrode;
- forming a second layer disposed above the first layer, wherein the second layer comprises a dielectric layer;
- forming a third layer disposed above the first layer, wherein the third layer comprises a dielectric layer, wherein the second layer has a different band gap than the third layer;
- forming a fourth layer disposed above the first layer, wherein the fourth layer comprises a dielectric layer, wherein the leakage current of the fourth layer is higher than that of the third layer;
- forming a fifth layer disposed above the first layer, wherein the fifth layer is operable as an electrode;
- wherein the second, third and fourth layers are operable to have a higher current flow when biased in a first polarity and a lower current flow when biased in a second polarity;
- wherein the second polarity is opposite of the first polarity.
4 more elements
Dependencies are inferred from the claim text.