Target, method for producing the same, memory, and method for producing the same
AssigneeSony Corporation
InventorsKazuhiro Ohba, Yuichi Kamori, Hitoshi Kimura
Life of this patent
Estimating the term…
Abstract
A target including: at least one refractory metal element selected from the group consisting of Ti, Zr, Hf, V, Nb, Ta, and lanthanoids; at least one element selected from the group consisting of Al, Ge, Zn, Co, Cu, Ni, Fe, Si, Mg, and Ga; and at least one chalcogen element selected from the group consisting of S, Se, and Te. And a method for producing the target.
Claims8
A method for producing a target containing a chalcogen element, comprising the steps of:
- forming an alloy ingot using at least one refractory metal element selected from the group consisting of Ti, Zr, Hf, V, Nb, Ta, and lanthanoids and an additional element outside of the group;
- pulverizing the alloy ingot;
- and
- forming a target using the pulverized alloy ingot and at least one chalcogen element selected from the group consisting of S, Se, and Te.
A memory comprising a plurality of memory devices, the memory devices including an ionization layer that is formed using a target containing at least one refractory metal element selected from the group consisting of Ti, Zr, Hf, V, Nb, Ta, and lanthanoids, at least one element selected from the group consisting of Al, Ge, Zn, Co, Cu, Ni, Fe, Si, Mg, and Ga, and at least one chalcogen element selected from S, Se, and Te, and contains an element to be ionized.
A method for producing a memory including a plurality of memory devices, the method comprising the steps of:
- forming an alloy ingot using at least one refractory metal element selected from the group consisting of Ti, Zr, Hf, V, Nb, Ta, and lanthanoids and an additional element outside of the group;
- pulverizing the alloy ingot;
- forming a target using the pulverized alloy ingot and at least one chalcogen element selected from the group consisting of S, Se, and Te;
- and
- forming an ionization layer of the memory devices by sputtering using the target, the ionization layer containing an element to be ionized.
Dependencies are inferred from the claim text.