Resistive random access memory devices formed on fiber and methods of manufacturing the same
AssigneeSamsung Electronics Co., Ltd.
InventorsSang-hun JEON, Jong-jin PARK, Ji-hyun BAE
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Abstract
Provided is a memory device formed on a fiber. The memory device includes a lower electrode, a memory resistance layer, and an upper electrode, which are sequentially formed on a surface of the fiber. The memory resistance layer may have variable resistance properties. The memory device may further include an intermediate electrode and a switching layer formed between the memory resistance layer and the upper electrode.
Claims18
A resistive random access memory (RRAM) device formed on a fiber, the RRAM device comprising:
- a fiber;
- a lower electrode disposed on the fiber;
- a memory resistance layer disposed on the lower electrode;
- and
- an upper electrode disposed on the memory resistance layer.
A method of manufacturing a resistive random access memory (RRAM) device formed on a fiber, the method comprising:
- planarizing a surface of the fiber and forming a lower electrode on the surface of the fiber;
- forming a memory resistance layer on the lower electrode;
- and
- forming an upper electrode on the memory resistance layer.
Dependencies are inferred from the claim text.