Back to results
US 2014/0151573 A1Published application
Multi-energy ion implantation
AssigneeAdvanced Ion Beam Technology, Inc.
InventorZhimin Wan
Life of this patent
Estimating the term…
Loading patent…
Loading patent…
AssigneeAdvanced Ion Beam Technology, Inc.
InventorZhimin Wan
Estimating the term…
In a multi-energy ion implantation process, an ion implanting system having an ion source, an extraction assembly, and an electrode assembly is used to implant ions into a target. An ion beam having a first energy may be generated using the ion source and the extraction assembly. A first voltage may be applied across the electrode assembly. The ion beam may enter the electrode assembly at the first energy, exit the electrode assembly at a second energy, and implant ions into the target at the second energy. A second voltage may be applied across the electrode assembly. The ion beam may enter the electrode assembly at the first energy, exit the electrode assembly at a third energy, and implants ions into the target at the third energy. The third energy may be different from the second energy.
A method for multi-energy ion implantation into a target using an ion implanting system, the ion implanting system having an ion source, an extraction assembly, and an electrode assembly, the method comprising:
A non-transitory computer-readable storage medium containing computer executable instructions for multi-energy ion implantation into a target using an ion implanting system, the ion implanting system having an ion source, an extraction assembly, and an electrode assembly, the computer executable instructions comprising instructions for:
Dependencies are inferred from the claim text.