Methods and apparatus for measurement of relative critical dimensions
AssigneeKLA-Tencor Corporation
InventorHong XIAO
Life of this patent
Estimating the term…
Loading patent…
AssigneeKLA-Tencor Corporation
InventorHong XIAO
Estimating the term…
One embodiment relates to a method of measuring a relative critical dimension (RCD) during electron beam inspection of a target substrate. A reference image is obtained. A region of interest is defined in the reference image. A target image is obtained using an electron beam imaging apparatus. The target and reference images are aligned, and the region of interest is located in the target image. Measurement is then made of the RCD within the region of interest in the target image. Another embodiment relates to a method of measuring a RCD which involves scanning along a scan length that is perpendicular to the RCD. Point RCDs along the scan length are measured. A filter is applied to the point RCDs, and an average of the point RCDs is computed. Other embodiments, aspects and features are also disclosed.
A method of measuring a relative critical dimension during electron beam inspection of a target substrate, the method comprising:
An apparatus comprising:
A method of measuring a relative critical dimension (RCD), the method comprising:
Dependencies are inferred from the claim text.