Gas Barrier Film and Electronic Device
AssigneeLintec Corporation
InventorsSinichi Hoshi, Shigeto Okuji
Life of this patent
Estimating the term…
Abstract
Disclosed is a gas barrier film, which demonstrates superior gas barrier properties and surface flatness, demonstrates a high degree of adhesion between layers and is resistant to cracking when bent, and an electronic device provided therewith. A gas barrier film (10) of the present invention has a base (11), and a polyorganosiloxane layer (12) and an inorganic material layer (13) sequentially provided on at least one side of the base (11), and the inorganic material layer (13) is deposited by dynamic ion mixing method.
Claims17
1-15. (canceled)
A method of producing a gas barrier film, comprising:
- forming a layer containing a polyorganosiloxane-based compound on a base,
- subsequently, forming an inorganic material layer on the layer containing the polyorganosiloxane-based compound by dynamic ion mixing method,
- wherein the layer containing the polyorganosiloxane-based compound and the inorganic material layer are sequentially laminated on at least one side of the base.
An electronic device produced by the method of producing a gas barrier film according to claim 1.
The method of producing a gas barrier film according to claim 1, wherein the dynamic ion mixing method is conducted by applying a radio frequency electrical power to the base, plasma-forming gas is plasmatized around the base, argon ions in the plasma collide with a target, and particles are scattered from the target, the scattered particles adhered to the surface of the layer containing the polyorganosiloxane-based compound and are deposited thereon resulting in the formation of a deposited film of particles.
Dependencies are inferred from the claim text.