Optoelectronic device and the manufacturing method thereof
AssigneeEpistar Corporation
InventorsYi-Hung Lin, Cheng-Hong Chen
Life of this patent
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Abstract
An optoelectronic device comprises an optoelectronic semiconductor stack layer; a conductive layer on the optoelectronic semiconductor stack layer, the conductive layer comprising a top surface, a bottom surface opposite to the top surface, and a side surface; a first barrier layer covering the top surface; a second barrier layer covering the bottom surface; and a first metal oxide layer, wherein the first metal oxide layer covers the side surface, the first barrier layer, and the second barrier layer.
Claims20
An optoelectronic device, comprising:
- an optoelectronic semiconductor stack layer;
- a conductive layer on the optoelectronic semiconductor stack layer, the conductive layer comprising a top surface, a bottom surface opposite to the top surface, and a side surface;
- a first barrier layer covering the top surface;
- a second barrier layer covering the bottom surface;
- and
- a first metal oxide layer,
- wherein the first metal oxide layer covers the side surface, the first barrier layer, and the second barrier layer.
An optoelectronic device according to claim 0, wherein the thickness of the first sub-conductive layer or the second sub-conductive layer is in a range of 1.5 μm to 4.5 μm.
An optoelectronic device according to claim 0, wherein the thickness of the third barrier layer is equal to or greater than 5 nm.
A method of manufacturing an optoelectronic device, comprising the steps of:
- providing an optoelectronic semiconductor stack layer;
- forming a second barrier layer on semiconductor stack layer;
- forming a conductive layer on the second barrier layer, wherein the conductive layer comprises a side surface;
- forming a first barrier layer on the conductive layer;
- and
- providing a first metal oxide layer by oxidizing the first barrier layer, the conductive layer, and the second barrier layer so the first metal oxide layer covers the side surface.
Dependencies are inferred from the claim text.