Compound Semiconductor Lateral PNP Bipolar Transistors
AssigneeAnalog Devices, Inc.
InventorsSrivatsan Parthasarathy, Javier Alejandro Salcedo, Shuyun Zhang
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Abstract
Compound semiconductor lateral PNP bipolar transistors are fabricated based on processes traditionally used for formation of compound semiconductor NPN heterojunction bipolar transistors and hence such PNP bipolar transistors can be fabricated inexpensively using existing fabrication technologies. In particular, GaAs-based lateral PNP bipolar transistors are fabricated using GaAs-based NPN heterojunction bipolar transistor fabrication processes.
Claims21
A compound semiconductor lateral PNP bipolar transistor comprising:
- a doped P-type planar compound semiconductor layer including a compound semiconductor-based emitter and a compound semiconductor-based collector arranged at the same level and laterally with respect to one another, wherein the emitter and the collector are separate and electrically insulated from one another;
- a doped N-type planar compound semiconductor layer underlying the doped P-type planar compound semiconductor layer and including a compound semiconductor-based base element electrically coupled to the separate emitter and collector;
- a plurality of metallic base structure connections electrically coupled to the base element and electrically insulated from the emitter and the collector;
- first and second metallic electrodes at a first level above the doped P-type planar compound semiconductor layer and electrically connected independently to the emitter and collector, respectively;
- and
- a plurality of base electrodes formed at a second level above the doped N-type planar compound semiconductor layer, each base electrode connected to a respective metallic base structure connection, wherein the second level is below the first level.
(canceled)
A compound semiconductor lateral PNP bipolar transistor comprising:
- a doped P-type compound semiconductor emitter and a doped P-type compound semiconductor collector arranged laterally with respect to one another and electrically insulated from one another;
- a doped N-type compound semiconductor base element underlying and electrically coupled to the separate emitter and collector;
- and
- a plurality of metallic base structure connections electrically coupled to the base element and electrically insulated from the emitter and the collector.
(canceled)
A method for fabricating a compound semiconductor lateral PNP bipolar transistor, the method comprising:
- fabricating a doped P-type compound semiconductor-based emitter and a doped P-type compound semiconductor-based collector arranged laterally with respect to one another and electrically insulated from one another;
- fabricating a doped N-type compound semiconductor-based base element underlying and electrically coupled to the separate emitter and collector;
- fabricating a plurality of metallic base structure connections electrically coupled to the base element and electrically insulated from the emitter and the collector;
- fabricating first and second metallic electrodes at a first level above the emitter and collector layer and electrically connected independently to the emitter and collector, respectively;
- and
- fabricating a plurality of base electrodes at a second level above the base element layer, each base electrode connected to a respective metallic base structure connection, wherein the second level is below the first level.
(canceled)
Dependencies are inferred from the claim text.