Three-dimensional flash memory using fringing effect and method for manufacturing
AssigneeIndustry-University Cooperation Foundation Hanyang University
InventorYun Heub Song
Life of this patent
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Abstract
Provided are a three-dimensional flash memory using a fringing effect and a method of manufacturing the same. A through hole is formed through a plurality of gate electrodes vertically stacked on a substrate, and the interior of the through hole is filled with a tunneling insulating layer or an active region. Therefore, a charge storage layer is not formed in the through hole, but is formed outside of the through hole. The charge storage layer is formed in an intercell insulating layer filling a gap between the gate electrodes. When a fringing electric field is applied, the electric charges of the active region are trapped in the charge storage layer through the intercell insulating layer.
Claims20
A flash memory comprising:
- an active region having a semiconductor material;
- a tunneling insulating layer formed on the active region;
- a gate electrode formed on the tunneling insulating layer;
- an intercell insulating layer configured to fill a gap between the gate electrodes and formed on the tunneling insulating layer;
- and
- a charge storage layer formed in the intercell insulating layer to store electric charges through a fringing effect of an electric field which is applied from the gate electrode.
A flash memory comprising:
- an active region having a semiconductor material;
- a gate insulating layer formed on the active region;
- a gate electrode formed on the gate insulating layer;
- an intercell insulating layer configured to fill a gap between the gate electrodes and formed on the active region;
- and
- a charge storage layer formed in the intercell insulating layer to store electric charges through a fringing effect of an electric field which is applied from the gate electrode.
A method of manufacturing a flash memory, comprising:
- alternately stacking a gate electrode and an intercell insulating layer on a substrate;
- forming a through hole passing through the gate electrode and the intercell insulating layer in a first direction;
- foaming a tunneling insulating layer on a sidewall of the through hole;
- and
- forming an active region that fills a space defined by the tunneling insulating layer,
- wherein the intercell insulating layer includes a charge storage layer for storing electric charges through a fringing effect, and the charge storage layer extends in a second direction perpendicular to the first direction.
A method of manufacturing a flash memory, comprising:
- alternately stacking a sacrificial layer and an intercell insulating layer on a substrate;
- forming a through hole passing through the sacrificial layer and the intercell insulating layer in a first direction;
- forming an active region on a sidewall of the through hole;
- leaving the active region extending in the first direction and the intercell insulating layer extending in a second direction perpendicular to the first direction by removing the sacrificial layer;
- forming a gate insulating layer in the second direction in a space from which the sacrificial layer is removed;
- and
- forming a gate electrode in contact with the gate insulating layer in the second direction,
- wherein the intercell insulating layer includes a charge storage layer for storing electric charges through a fringing effect, and the charge storage layer extends in the second direction perpendicular to the first direction.
Dependencies are inferred from the claim text.