Transistor device

A transistor device comprising:

• a semiconductor substrate including a substrate body having a plurality of drain regions and source regions, said drain and source regions being spaced apart and alternately arranged in rows and columns to form a checkerboard pattern;
• a gate structure disposed on said semiconductor substrate and including a plurality of intersecting gate electrodes that are electrically interconnected, each of said gate electrodes being arranged between a corresponding adjacent pair of said drain and source regions;
• a first metal layer disposed on said substrate body, and including a plurality of spaced-apart first pattern elements and a first patterned region, each of said first pattern elements being electrically connected to a respective one of said drain regions, said first patterned region surrounding each of said first pattern elements, being free of contact with said first pattern elements, and being electrically connected to said source regions;
• and
• a second metal layer disposed on top of said first metal layer, and having a plurality of spaced-apart second pattern elements, and a second patterned region, said second pattern elements being electrically connected to said first patterned region of said first metal layer, said second patterned region surrounding each of said second pattern elements, being free of contact with said second pattern elements, and being electrically connected to said first pattern elements of said first metal layer.