Bulk finfet well contacts with fin pattern uniformity

A method comprising:

• forming a well with a first conductivity type in a first region of a substrate;
• forming fins on the first region and a second region of the substrate in a uniform uninterrupted pattern;
• forming a first epitaxial layer with the first conductivity type on at least one portion of the fins in the first region;
• and
• forming a second epitaxial layer with a second conductivity type on at least one portion of the fins in the second region.

A structure comprising:

• a substrate comprising a first region and a second region, the first region comprising a well with a first conductivity;
• fins extending over the first region and the second region in an uninterrupted pattern, wherein a first section of the fins extends over the first region and a second section of the fins extends over the second region;
• a dielectric layer formed surrounding a first portion of the fins;
• an epitaxial layer formed surrounding a second portion of the fins on at least one portion of the first section of the fins and on at least one portion of the second section of the fins, the epitaxial layer on the at least one portion of the first section of the fins having the first conductivity and the epitaxial layer on the at least one portion of the second section of the fins having a second conductivity such that the at least one portion of the first section of the fins creates a contiguous charge-neutral zone from the epitaxial layer to the well;
• and
• at least one gate structure perpendicular to the fins and between the first region and the second region.